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Product Detailed Parameters
- Description：MOSFET N-CH 60V 200MA TO92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：400mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92-3
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
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Overview
The onsemi 2N7000BU is an N-channel enhancement mode field effect transistor manufactured using high cell density DMOS technology. It features a TO-92 package with three pins for through-hole mounting. Key electrical parameters include a drain-source voltage of 60 V, continuous drain current of 200 mA, and maximum power dissipation of 400 mW. The device exhibits a typical static drain-source on-resistance of 1.2 Ω at VGS=10V and ID=500mA, with a gate threshold voltage ranging from 0.8 V to 3 V.
Feature Summary
- High density cell design minimizes on-state resistance while ensuring rugged switching performance.
- Voltage controlled small signal switch suitable for low-voltage applications.
- Provides ESD protection exceeding 100 V (HBM) and 2 kV (CDM).
- Constructed as a Pb-free and Halogen-free component.
Applications
- Small servo motor control
- Power MOSFET gate drivers
- General switching applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging type, such as bulk or tape and reel quantities. Ensure the procurement matches the required mechanical outline, specifically CASE 135AN or CASE 135AR for the TO-92 configuration. Confirm RoHS compliance status directly from the manufacturer's latest datasheet revision before finalizing orders.
Selection Notes
Select this component for low-current, low-voltage switching tasks requiring through-hole integration. Evaluate thermal resistance characteristics relative to ambient temperature derating curves. Compare on-resistance values across different gate voltages to ensure compatibility with available drive signals. Verify safe operating area limits under pulsed conditions for specific load requirements.
Part Context
This part belongs to the 2N7000 series of N-channel enhancement mode FETs produced by onsemi. It shares architectural similarities with the 2N7002 and NDS7002A variants, differing primarily in package style and pinout orientation. The series utilizes proprietary DMOS technology to optimize the balance between conduction losses and switching speed.
Replacement Considerations
Direct substitutes within the same family include the standard 2N7000 variant. Cross-package equivalents like the SOT-23 packaged 2N7002 require verification of pinout mapping differences. Ensure any replacement maintains identical voltage ratings and thermal characteristics for the target application environment.
