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Product Detailed Parameters
- Description：MOSFET N-CH 60V 200MA TO92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：400mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92-3
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
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Overview
The onsemi 2N7000BU_T is an N-channel enhancement mode MOSFET housed in a TO-226AA (TO-92) through-hole package. It features a drain-source voltage rating of 60 V and a continuous drain current of 200 mA at 25°C. The device utilizes vertical DMOS technology to achieve a maximum on-resistance of 5 Ω at VGS = 10 V. Key electrical parameters include a gate-source threshold voltage range of 0.8 V to 3.9 V, a maximum power dissipation of 400 mW, and an operating junction temperature range from -55°C to +150°C.
Feature Summary
- Vertical DMOS technology for low on-resistance and robust switching performance
- Logic-level gate drive capability with low input capacitance
- Integrated source-drain diode for inductive load protection
- High thermal stability and extended safe operating area
Applications
- Power MOSFET gate driver circuits
- Low voltage and low current switching applications
- Battery switch and load switch implementations
- Motor controller output stages
Procurement Notes
Verify the specific suffix 'T' against the manufacturer's official documentation to confirm tape-and-reel packaging requirements. Ensure the ordered part matches the exact TO-226AA form factor and pinout configuration required by the design. Cross-reference the datasheet revision date to validate parameter consistency before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring reliable N-channel switching in through-hole layouts. The 60 V rating provides sufficient headroom for standard 5 V and 12 V systems. Verify that the 5 Ω on-resistance meets the thermal constraints for the expected continuous current levels. Confirm compatibility with logic-level control signals given the specified threshold voltage range.
Part Context
This part belongs to the widely used 2N7000 series of small signal MOSFETs. It serves as a standard replacement for legacy silicon devices in general-purpose switching roles. The TO-226AA package facilitates easy prototyping and manual assembly compared to surface-mount alternatives while maintaining comparable electrical characteristics.
Replacement Considerations
Direct substitutes include the 2N7000 and 2N7000BU from other manufacturers such as Microchip or Diotec. Verify pinout compatibility and ensure the alternative part meets the 60 V / 200 mA specification. Check if the substitute requires the same gate drive voltage for equivalent on-resistance performance.
