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Product Detailed Parameters
- Description：MOSFET N-CH 60V 200MA TO92-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：60 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92 (TO-226)
- Package / Case：TO-226-3, TO-92-3 Long Body, Formed Leads
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Overview
The onsemi 2N7000RLRA is a small signal N-channel enhancement mode MOSFET housed in a TO-92 package. It features a maximum drain-source voltage of 60 Vdc and a continuous drain current of 200 mAdc. The device exhibits a static drain-source on-resistance of 5.0 Ω at VGS = 10 Vdc and ID = 0.5 Adc, with a gate threshold voltage ranging from 0.8 to 3.0 Vdc. Total power dissipation is rated at 350 mW at 25°C ambient temperature, with an operating junction temperature range spanning -55°C to +150°C.
Feature Summary
- Utilizes planar DMOS technology for high unit density and robust switching performance.
- Designed for low voltage and low current applications requiring efficient control.
- Features Pb-Free packaging options available within the product line.
Applications
- Battery switch circuits
- Load switching applications
- Power MOSFET gate driver stages
Procurement Notes
Verify that the ordering suffix RLRA corresponds specifically to the 2000-unit tape and reel configuration as documented in the official datasheet. Confirm that the component meets the required environmental standards and lead-free specifications if mandated by the design constraints. Ensure compatibility with standard TO-92 mounting processes during integration.
Selection Notes
Select this component when a compact N-channel MOSFET with a 60V rating and 200mA continuous current capability is required. The TO-92 through-hole package facilitates easy prototyping and manual assembly. Consider the thermal resistance characteristics and power dissipation limits relative to the expected load conditions and ambient operating temperatures.
Part Context
This part belongs to the 2N7000 series of small signal MOSFETs manufactured by onsemi. The RLRA suffix indicates a specific bulk shipping format utilizing tape and reel packaging containing 2000 units per package. This variant maintains the electrical characteristics of the standard 2N7000 while optimizing handling for automated placement equipment.
Replacement Considerations
Cross-reference with other manufacturers offering equivalent 60V N-channel TO-92 MOSFETs. Verify pinout compatibility and ensure that on-resistance and threshold voltage parameters fall within acceptable tolerances for the intended circuit application.
