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Product Detailed Parameters
- Description：MOSFET N-CH 60V 200MA TO92-3
- Series：-
- Mfr：onsemi
- Package：Tape & Box (TB)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：60 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92 (TO-226)
- Package / Case：TO-226-3, TO-92-3 Long Body, Formed Leads
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Overview
The 2N7000RLRPG is a small signal N-channel enhancement mode MOSFET manufactured by onsemi. It features a TO-92 package with straight leads in an ammo box configuration, containing 2000 units per reel. The device supports a continuous drain current of 200 mA and a pulsed drain current of 500 mA. It withstands a maximum drain-source voltage of 60 Vdc and operates within a junction temperature range of -55°C to +150°C. The component is Pb-Free and AEC Qualified.
Feature Summary
- AEC Qualified for automotive applications
- PPAP Capable manufacturing process
- Pb-Free compliant packaging
Applications
- Battery switching circuits
- Load control applications
- General-purpose small signal switching
Procurement Notes
Verify the specific ordering suffix RLPG against official documentation to confirm the Ammo Box tape and reel quantity of 2000 units. Ensure compatibility with standard TO-92 through-hole mounting requirements. Confirm that the Pb-Free designation aligns with project environmental specifications. Cross-reference the AEC qualification status if the application requires automotive-grade reliability standards.
Selection Notes
Select this component when a robust N-channel MOSFET with high thermal resistance characteristics is required for through-hole designs. The TO-92 package provides mechanical stability for manual or automated insertion processes. Consider the 357 °C/W thermal resistance value for heat dissipation planning in low-power environments where ambient temperatures may fluctuate significantly.
Part Context
This part belongs to the 2N7000 series of small signal MOSFETs produced by onsemi. It utilizes planar DMOS technology to achieve reliable performance in general-purpose switching roles. The device is categorized as a preferred choice for future use, indicating long-term availability and optimized cost-performance balance for mass production designs.
Replacement Considerations
Direct substitutes include the 2N7000G (Bulk), 2N7000RLRA (Tape & Reel), and 2N7000RLRAG (Tape & Reel). Verify pinout alignment and package dimensions before substitution to ensure physical compatibility with existing PCB footprints.
