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Product Detailed Parameters
- Description：DIODE
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.23 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：370mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The 2N7002-13-F-79 is an N-channel enhancement mode MOSFET from Diodes Incorporated, designed for low-voltage switching applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 115mA. The device offers a typical on-resistance of 7.5 Ohms at Vgs=10V and a gate threshold voltage range of 1.0V to 2.5V. Packaged in a compact SOT-23-3 surface-mount format, it supports operation across a temperature range of -55°C to +150°C with a power dissipation rating of 200mW.
Feature Summary
- Low on-resistance for efficient signal switching
- Logic-level gate threshold voltage compatibility
- Fast switching speed with low input capacitance
- Compact SOT-23 surface-mount package design
Applications
- Signal processing circuits
- Load switching applications
- Level shifting interfaces
- Motor controller driver stages
Procurement Notes
Verify the specific suffix '-13-F-79' against official Diodes Incorporated documentation to confirm exact packaging configuration and compliance status. Ensure the ordering code matches the required reel or cut-tape specifications for your assembly line. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Selection Notes
Select this component when a small-signal N-channel MOSFET with 60V breakdown is required for logic-level control. Consider its 115mA current limit and 7.5 Ohm on-resistance for low-power switching tasks. Evaluate thermal constraints given the 200mW dissipation rating in the SOT-23 package. Compare against alternative 2N7002 family members if higher current capacity or different package footprints are needed.
Part Context
This part belongs to the widely used 2N7002 family of N-channel enhancement mode field-effect transistors manufactured by Diodes Incorporated. These devices are standard components for general-purpose low-voltage switching. The product line emphasizes cost-effective solutions for consumer electronics and industrial control systems requiring reliable performance in compact form factors.
Replacement Considerations
Compatible substitutes include other manufacturers' 2N7002 variants such as Nexperia's BSS138 or Toshiba's T2N7002, provided pinouts and electrical parameters align. Verify that replacement parts meet the same 60V Vds and SOT-23 package requirements.
