2N7002-E3

$0.69

Description：MOSFET N-CH 60V 115MA TO236
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d49ee7dcd5b4 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 115MA TO236
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：200mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-236
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002-E3

Overview

The Vishay Siliconix 2N7002-E3 is an N-channel enhancement mode MOSFET housed in a TO-236 (SOT-23) package. It features a drain-source voltage rating of 60 V and a continuous drain current of 115 mA at 25°C. The device exhibits a maximum on-resistance of 2.5 Ω at VGS = 10 V and a typical gate threshold voltage of 2.1 V. Key dynamic parameters include an input capacitance of 22 pF and switching times of approximately 7 ns.

Feature Summary

Logic-level operation enabling direct interface with TTL and CMOS drivers without buffering
Fast switching speed suitable for high-speed circuit applications
Low input and output leakage characteristics
Halogen-free construction compliant with IEC 61249-2-21 standards

Applications

Direct logic-level interface circuits
Battery operated systems
Solid-state relays
Drivers for relays, solenoids, lamps, displays, and memories

Procurement Notes

Verify the component against the official Vishay datasheet Document Number 70226 to confirm electrical specifications and physical dimensions. Ensure the ordering suffix matches the required packaging configuration. Cross-reference the manufacturer's part number with authorized distributors to validate authenticity and traceability before finalizing procurement.

Selection Notes

Select this component for low-voltage switching applications requiring direct microcontroller or logic gate drive. Evaluate the thermal resistance and power dissipation limits relative to the ambient temperature and duty cycle. Confirm that the 60 V breakdown voltage provides adequate margin for the specific circuit operating conditions.

Part Context

This component belongs to the 2N7000/2N7002 family of N-channel MOSFETs manufactured by Vishay Siliconix. The 2N7002 variant specifically utilizes the SOT-23 surface-mount package, distinguishing it from through-hole alternatives like the 2N7000. It serves as a standard general-purpose switching transistor widely used in consumer electronics and industrial control interfaces.