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Product Detailed Parameters
- Description：Interface
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：340mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.5Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：35 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.08W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The MCC 2N7002-TP-HF is a single N-channel enhancement mode MOSFET designed for surface-mount applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 115mA at 25°C. The device utilizes silicon technology with a SOT-23-3 package, offering a maximum power dissipation of 150mW to 300mW depending on specific thermal conditions. It operates within a junction temperature range of -55°C to +150°C and includes an RoHS-compliant halogen-free variant.
Feature Summary
- Single N-channel enhancement mode configuration
- Surface-mount SOT-23-3 packaging
- RoHS compliant and halogen-free construction
Applications
- General-purpose switching circuits
- Logic level signal conversion
- Low-power load control
Procurement Notes
Verify the exact suffix against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure the selected variant matches the required RoHS and halogen-free specifications for your assembly process. Cross-reference the specific part number with authorized distributors to confirm current availability and manufacturing status before finalizing procurement plans.
Selection Notes
Select this component for low-current switching tasks requiring a compact footprint. Compare the 115mA continuous current rating against circuit requirements to ensure adequate headroom. Consider the SOT-23-3 package dimensions for PCB layout constraints. Verify that the 60V breakdown voltage exceeds the maximum expected drain-source voltage in the application environment.
Part Context
This component belongs to the standard 2N7002 family of small-signal N-channel MOSFETs widely used in consumer electronics and industrial controls. It serves as a direct replacement for generic 2N7002 devices from other manufacturers, provided the package and electrical limits are compatible. The 'TP' designation typically indicates a tape-and-reel packaging format optimized for automated assembly processes.
Replacement Considerations
Compatible substitutes include the 2N7002DW (Dual N-Channel) if dual functionality is acceptable, or single-channel variants like the 2N7002T-TP and 2N7002A-TP from MCC. Other manufacturers offer equivalent parts such as the ON Semiconductor 2N7002 or Comchip Technology 2N7002-HF, subject to package and parameter verification.
