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Product Detailed Parameters
- Description：MOSFET N-CH 60V 115MA SOT23
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：40V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The Central Semiconductor Corp 2N7002 TR PBFREE is an N-channel enhancement mode MOSFET housed in a surface-mount SOT-23-3 package. It features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 300 mA at 25°C case temperature. The device exhibits a maximum on-resistance of 4 Ohms at 10V gate drive and a threshold voltage up to 1.5V. It supports a gate-source voltage range of ±20V, dissipates up to 500mW of power, and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- N-channel silicon enhancement mode construction for reliable switching
- Surface-mount SOT-23-3 packaging optimized for automated assembly
- High thermal stability with extended operating temperature limits
Applications
- General-purpose low-voltage signal switching
- Battery protection circuits
- Power management modules
Procurement Notes
Verify the specific manufacturer part number against official Central Semiconductor documentation to confirm exact electrical tolerances and pinout configurations. Ensure compliance with RoHS3 directives and check for any specific handling requirements related to moisture sensitivity levels before integration into production workflows.
Selection Notes
Select this component for applications requiring compact N-channel switching with moderate current capabilities. Evaluate the 4 Ohm on-resistance against circuit efficiency requirements and ensure the 60V drain-source rating exceeds the maximum operational voltage to prevent breakdown under transient conditions.
Part Context
This component belongs to the standard 2N7002 family of small-signal MOSFETs widely utilized in consumer electronics and industrial control systems. It serves as a fundamental discrete semiconductor element for logic-level interfacing and load driving tasks within modern electronic designs.
Replacement Considerations
Cross-reference with other manufacturers' 2N7002 variants such as Nexperia or ON Semiconductor parts to verify pin compatibility and electrical parameter alignment before substitution.
