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Product Detailed Parameters
- Description：MOSFET N-CH 60V 300MA TO236AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：830mW (Tc)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-236AB
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The Nexperia 2N7002,235 is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology in a SOT23 (TO-236AB) plastic surface-mounted package. Key electrical parameters include a drain-source voltage of 60 V and a continuous drain current of 300 mA at 25 °C solder point temperature. The device exhibits a maximum on-state resistance of 5 Ω at VGS = 10 V and ID = 500 mA. Total power dissipation reaches 0.83 W at 25 °C. Operating junction temperatures range from -65 °C to 150 °C.
Feature Summary
- Suitable for logic level gate drive sources
- Very fast switching capability
- Surface-mounted package design
Applications
- Logic level translators
- High-speed line drivers
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and manufacturing origin. Ensure compatibility with standard SOT23 footprints during PCB layout. Confirm that the selected variant meets all required thermal and electrical specifications for the intended operating environment before finalizing procurement orders.
Selection Notes
Select this component when a compact N-channel MOSFET with logic-level compatibility is required. The SOT23 package suits space-constrained designs. Verify that the 60 V rating and 300 mA current capacity align with circuit requirements. Consider thermal management needs given the 0.83 W power dissipation limit in still air conditions.
Part Context
This part belongs to the 2N7002 series of N-channel Trench MOSFETs manufactured by Nexperia. It shares core electrical characteristics with other variants in the family but differs in physical packaging and marking codes. The TO-236AB designation corresponds to the SOT23 outline, ensuring interchangeability with standard surface-mount layouts designed for three-terminal small signal transistors.
Replacement Considerations
Direct substitutes include other manufacturers' 2N7002 equivalents meeting identical pinout and electrical specifications. Verify package dimensions and thermal resistance values when cross-referencing alternative brands to ensure mechanical fit and performance parity.
