SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi 2N7002_S00Z is an N-channel enhancement mode field effect transistor manufactured using high cell density DMOS technology. It features a maximum drain-source voltage of 60 V and a continuous drain current of 115 mA. The device provides low on-state resistance, rugged switching performance, and operates within a temperature range of -55°C to 150°C.
Verify the specific suffix against official documentation to confirm package type and tape/reel specifications. Ensure compatibility with existing circuit designs regarding thermal resistance and absolute maximum ratings before finalizing procurement orders.
Select this component for applications requiring logic-level drive capabilities in compact surface-mount packages. Evaluate the safe operating area and thermal characteristics to ensure suitability for intended load currents and ambient temperatures.
This part belongs to the 2N700X series of general-purpose N-channel MOSFETs. These devices are widely used as standard components due to their versatility in low-power switching tasks and availability across multiple manufacturers.
Compatible substitutes include Vishay 2N7002K-T1-GE3 and Nexperia BSS138P variants. Verify pinout alignment and electrical parameters such as threshold voltage and on-resistance when considering alternative sources.