2N7002AKRA-QZ

$0.10

Description：MOSFET 2N-CH 60V 0.32A 6DFN
Series：-

SKU:9e7f64da2bef Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.32A 6DFN
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：320mA (Ta)
Rds On (Max) @ Id, Vgs：2.9Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id：2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：315pC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：9.2pF @ 30V
Power - Max：420mW (Ta), 5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-XFDFN Exposed Pad
Supplier Device Package：DFN1412-6
Grade：Automotive
Qualification：AEC-Q101

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2N7002AKRA-QZ

Overview

The Nexperia 2N7002AKRA-Q is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in an ultra-small DFN1412-6 (SOT1268) leadless surface-mounted package with dimensions of 1.4 mm x 1.2 mm x 0.47 mm. The device features a drain-source voltage rating of 60 V and a continuous drain current of 320 mA at 25 °C. Static characteristics include a maximum on-state resistance of 2.9 Ω at VGS = 10 V and ID = 100 mA, and a gate-source threshold voltage ranging from 1.3 V to 2.6 V. Total power dissipation is rated at 420 mW per transistor and 630 mW per device at 25 °C ambient temperature.

Feature Summary

Logic-level compatible for direct interface with standard logic circuits
Very fast switching performance enabled by Trench MOSFET technology
Integrated ElectroStatic Discharge (ESD) protection
Qualified according to AEC-Q101 automotive standards

Applications

Relay driver
High-speed line driver
Low-side load switch
Switching circuits

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before purchase. Confirm that the component meets the necessary AEC-Q101 qualification requirements if intended for automotive applications. Ensure the design accommodates the thermal constraints associated with the DFN1412-6 package footprint and soldering profile.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching tasks. The low on-state resistance supports efficient power handling in space-constrained designs. Verify that the 60 V breakdown voltage and 320 mA current limits align with the specific circuit demands and operating temperatures.

Part Context

This part belongs to the 2N7002 series of N-channel MOSFETs manufactured by Nexperia. It represents a dual-transistor variant designed for high-density PCB layouts. The use of Trench MOSFET technology distinguishes it from older planar designs, offering improved switching speeds and lower conduction losses within the same small form factor.