2N7002AQ-13

2N7002AQ-13

$0.17
  • Description:MOSFET N-CH 60V 180MA SOT23
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:b6cafc8b49e8 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET N-CH 60V 180MA SOT23
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:180mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):5V
  • Rds On (Max) @ Id, Vgs:5Ohm @ 115mA, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:23 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):370mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Download product information

2N7002AQ-13

Overview

The Diodes Incorporated 2N7002AQ-13 is an N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 180mA at +25°C. The device exhibits a maximum on-resistance of 6Ω at VGS = 5V and 10V. It operates within a temperature range of -55°C to +150°C, with total power dissipation rated at 370mW or 540mW depending on PCB configuration.

Feature Summary

  • Qualified to AEC-Q101 standards with PPAP capability for automotive use
  • Features ESD protection up to 1.2kV HBM on the gate terminal
  • Manufactured in IATF 16949 certified facilities
  • Totally lead-free and fully RoHS compliant

Applications

  • Motor Control
  • Power Management Functions

Procurement Notes

Verify that the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format as defined in the manufacturer's documentation. Confirm compliance requirements such as halogen-free status and moisture sensitivity level prior to procurement to ensure alignment with assembly specifications.

Selection Notes

Select this component when automotive qualification and high reliability are required. It is suitable for designs needing low on-resistance and fast switching speeds within a compact SOT23 package. Ensure thermal management accounts for the specified power dissipation limits under varying ambient temperatures.

Part Context

This part belongs to the 2N7002 family of N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares core electrical characteristics with standard variants but includes additional automotive-specific qualifications and manufacturing controls to meet stringent industry standards for vehicle electronics.

Replacement Considerations

Standard 2N7002 parts may lack AEC-Q101 qualification. Verify if non-automotive equivalents meet the required environmental and reliability standards before substitution.

FAQ

Is the 2N7002AQ-13 qualified for automotive applications?

Yes, it is AEC-Q101 qualified, supported by a PPAP, and manufactured in IATF 16949 certified facilities.

What is the gate ESD protection rating?

The gate provides ESD protection up to 1.2kV using the Human Body Model (HBM).

2N7002AQ-132N7002AQ-13
$0.17
Buy Now