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The Diodes Incorporated 2N7002AQ-13 is an N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 180mA at +25°C. The device exhibits a maximum on-resistance of 6Ω at VGS = 5V and 10V. It operates within a temperature range of -55°C to +150°C, with total power dissipation rated at 370mW or 540mW depending on PCB configuration.
Verify that the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format as defined in the manufacturer's documentation. Confirm compliance requirements such as halogen-free status and moisture sensitivity level prior to procurement to ensure alignment with assembly specifications.
Select this component when automotive qualification and high reliability are required. It is suitable for designs needing low on-resistance and fast switching speeds within a compact SOT23 package. Ensure thermal management accounts for the specified power dissipation limits under varying ambient temperatures.
This part belongs to the 2N7002 family of N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares core electrical characteristics with standard variants but includes additional automotive-specific qualifications and manufacturing controls to meet stringent industry standards for vehicle electronics.
Standard 2N7002 parts may lack AEC-Q101 qualification. Verify if non-automotive equivalents meet the required environmental and reliability standards before substitution.
Yes, it is AEC-Q101 qualified, supported by a PPAP, and manufactured in IATF 16949 certified facilities.
The gate provides ESD protection up to 1.2kV using the Human Body Model (HBM).