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The Nexperia 2N7002BK,215 is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It operates within a 60 V drain-source voltage range and supports a continuous drain current of 350 mA at 25 °C. The device features a low on-state resistance of 1.6 Ω maximum at VGS = 10 V. It is housed in a compact SOT23 (TO-236AB) surface-mount package with three terminals. The component is qualified to AEC-Q101 standards for automotive applications and includes electrostatic discharge protection up to 2 kV.
Verify the specific ordering suffix
Select this component for designs requiring small form factor N-channel switching with logic-level gate drive compatibility. The AEC-Q101 qualification makes it suitable for automotive environments. Ensure thermal management aligns with the specified junction-to-ambient resistance values when operating near maximum power dissipation limits.
This part belongs to the 2N7002 series of N-channel Trench MOSFETs manufactured by Nexperia. The 'BK' designation indicates specific electrical characteristics and packaging configuration within the series. The ',215' suffix denotes tape and reel packaging for automated assembly processes.
Direct replacements must match the 60 V rating, SOT23 package, and N-channel enhancement mode. Verify pinout compatibility (Gate-Source-Drain) and ensure equivalent or lower RDS(on) specifications are met for circuit performance retention.