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The Nexperia 2N7002BKS,115 is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a compact SOT363 (SC-88) surface-mounted package with six leads. The device supports a drain-source voltage of 60 V and a continuous drain current of 300 mA per transistor at 25 °C. Key electrical parameters include a maximum gate-source voltage of ±20 V, a typical on-state resistance of 1.3 Ω at VGS=5 V, and a total gate charge of 0.5 nC. It features ESD protection up to 2 kV HBM and is qualified under the AEC-Q101 automotive standard.
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Select this component when space-constrained designs require dual independent N-channel switching capabilities. The SOT363 package offers a small footprint suitable for high-density PCB layouts. Ensure the application operates within the 60 V drain-source voltage limit and 300 mA continuous current rating. Consider the thermal resistance characteristics if operating near ambient temperature limits or requiring pulsed current handling.
This part belongs to Nexperia's Trench MOSFET family, designed for low-power switching applications. It serves as a dual-channel alternative to single-channel devices like the 2N7002NXBK, consolidating two transistors into one compact package. The device complements other small-signal MOSFETs such as the NX7002BKW, providing enhanced integration for signal routing and level shifting tasks.
Direct physical replacements include the 2N7002HSX, which shares the SOT363/SC-88 package and similar electrical specifications. Verify pinout compatibility and thermal performance when substituting.