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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.3A 6TSSOP
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 10V
- Power - Max：295mW (Ta), 1.04W (Tc)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：6-TSSOP
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Nexperia 2N7002BKSH is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a compact SOT363 (SC-88) surface-mounted package with six leads. The device supports a drain-source voltage of 60 V and a continuous drain current of 300 mA per transistor at 25 °C. It features logic-level compatibility, very fast switching capabilities, and ESD protection up to 2 kV HBM. The component is qualified under the AEC-Q101 standard for automotive applications.
Feature Summary
- Dual N-channel configuration within a single SOT363 package
- Logic-level compatible gate drive requirements
- Very fast switching performance via Trench MOSFET technology
- AEC-Q101 qualification for automotive reliability
Applications
- Relay driver circuits
- High-speed line drivers
- Low-side load switches
- General switching circuits
Procurement Notes
Verify the specific suffix 'H' against official Nexperia documentation to confirm packaging details, as standard listings often reference '2N7002BKS'. Ensure the ordering code matches the required reel quantity and tape specifications. Confirm that the AEC-Q101 qualification status aligns with your specific application requirements before finalizing procurement.
Selection Notes
Select this component when space constraints require two N-channel MOSFETs in a minimal footprint. The low on-state resistance and fast switching make it suitable for high-frequency applications. Verify thermal management needs based on the total power dissipation limits provided in the datasheet for the specific PCB layout.
Part Context
This part belongs to the Nexperia 2N7002 series of small-signal MOSFETs. It represents an evolution from single-channel variants like the 2N7002 by integrating two channels into one package. This integration reduces board space and simplifies assembly compared to using discrete single transistors.
Replacement Considerations
Direct replacements include the 2N7002BKS and 2N7002PS,115. Verify pinout compatibility and electrical parameters such as RDS(on) and VGS(th) before substitution.
