2N7002BKVL

Overview

The Nexperia 2N7002BKVL is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It operates within a 60 V drain-source voltage range and supports a continuous drain current of 350 mA at 25 °C. The device features a maximum on-state resistance of 1.6 Ω at 10 V gate drive. Packaged in the SOT23 (TO-236AB) surface-mount format, it includes ESD protection rated up to 2 kV and holds AEC-Q101 automotive qualification.

Feature Summary

• Logic-level compatible for direct interface with standard logic circuits
• Very fast switching performance enabled by Trench MOSFET technology
• Integrated electrostatic discharge protection up to 2 kV
• Qualified for automotive applications under AEC-Q101 standards

Applications

• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits

Procurement Notes

Verify the specific suffix 'VL' against official Nexperia documentation to confirm tape-and-reel packaging details and manufacturing site codes. Ensure the ordering part number matches the required package variant and quality grade before finalizing procurement orders.

Selection Notes

Select this component for low-voltage signal switching and general-purpose load control where compact SOT23 footprint is required. Confirm that the 60 V breakdown rating and 350 mA current limit align with the circuit's peak operational demands and thermal dissipation capabilities.

Part Context

This device belongs to the 2N7002BK family of N-channel Trench MOSFETs from Nexperia. It represents a modernized iteration of the classic 2N7002 specification, offering improved on-state resistance and switching characteristics while maintaining compatibility with the traditional pinout and package dimensions.

Replacement Considerations

Direct replacements include other manufacturers' 2N7002 variants or Nexperia's 2N7002BK,215. Verify pinout alignment and electrical parameters such as RDS(on) and VGS(th) when substituting.