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The 2N7002DW-TPQ2 is a dual N-channel enhancement mode MOSFET array manufactured by Micro Commercial Components. It utilizes silicon technology and is housed in a surface-mount SOT-363 package. The device features a drain-source breakdown voltage of 60V and a continuous drain current rating of 115mA. Key electrical parameters include a maximum on-resistance of 13.5 Ohms, a gate-source voltage range of -20V to +20V, and a threshold voltage of 1V. Power dissipation is rated at 150mW, with an operating temperature range spanning from -55°C to +150°C.
Verify the specific suffix 'Q2' against official manufacturer documentation to confirm automotive-grade qualification status. Ensure that the requested component matches the exact part number specifications provided in the datasheet. Confirm RoHS compliance details and environmental certifications prior to final procurement decisions.
Select this component for applications requiring dual N-channel switching within a minimal footprint. The SOT-363 package supports surface-mount assembly processes. Consider the 60V voltage rating and 115mA current limit when designing load interfaces. Evaluate thermal requirements based on the 150mW power dissipation specification.
This component belongs to the 2N7002DW series of dual N-channel MOSFETs produced by Micro Commercial Components. It shares core characteristics with other variants in the family but is distinguished by its specific packaging and potential qualification markings associated with the Q2 suffix. The series is designed for general-purpose switching tasks.
Public confirmed substitute part numbers are not available in the provided source data.