2N7002DWA-7

$0.21

Description：MOSFET 2N-CH 60V 0.18A SOT363
Series：-

SKU:942ce98a5e2b Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.18A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：180mA
Rds On (Max) @ Id, Vgs：6Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：22pF @ 25V
Power - Max：300mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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2N7002DWA-7

Overview

The 2N7002DWA-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 180mA at +25°C with VGS=10V, or 150mA at VGS=5V. The device offers low on-resistance, rated at a maximum of 8Ω at VGS=5V and 6Ω at VGS=10V. Packaged in an SOT363 surface-mount case, it provides fast switching speeds and low gate threshold voltage. Total power dissipation is 300mW on FR-4 single-sided boards. The component is RoHS compliant, halogen-free, and suitable for compact circuit designs.

Feature Summary

Dual N-channel configuration within a compact SOT363 package
Low on-state resistance for high-efficiency power management
Fast switching speed with low input capacitance
Totally lead-free and fully RoHS compliant

Applications

DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers for relays, solenoids, lamps, and displays

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity. The -7 suffix indicates a standard tape and reel containing 3,000 units. Confirm compliance requirements such as RoHS and halogen-free status directly with the manufacturer's documentation before procurement. Ensure availability aligns with project timelines as this part may be subject to change notices.

Selection Notes

Select this component for applications requiring dual N-channel switching in a small footprint. Verify that the required gate drive voltage supports the specified on-resistance ratings, particularly if operating below 5V. Consider the thermal resistance limits when designing PCB layouts, as power dissipation capabilities depend heavily on copper pad area and board thickness.

Part Context

This component belongs to the 2N7002 family of dual N-channel MOSFETs from Diodes Incorporated. It shares similar electrical characteristics with other variants like the 2N7002DWQ but differs in automotive qualification status. The standard version is designed for general-purpose commercial applications rather than strict automotive environments.