2N7002DWQ-7-F

$0.20

Description：MOSFET 2N-CH 60V 0.23A SOT363
Series：-

SKU:1e2f082c1b8d Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.23A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：230mA
Rds On (Max) @ Id, Vgs：7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
Power - Max：310mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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2N7002DWQ-7-F

Overview

The 2N7002DWQ-7-F is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 0.23A at +25°C. The device offers a low on-state resistance (RDS(ON)) of 7.5Ω max at VGS = 5V and 13.5Ω max at VGS = 10V. Packaged in an SOT363 surface-mount format, it operates within a temperature range of -55°C to +150°C. Key electrical parameters include a gate threshold voltage of 1.0V to 2.0V, input capacitance up to 50pF, and total power dissipation of 0.4W.

Feature Summary

Dual N-channel configuration for compact circuit design
Low on-state resistance with superior switching performance
Low gate threshold voltage and low input/output leakage
Totally lead-free and fully RoHS compliant

Applications

Motor control systems
Power management functions
High-efficiency power management applications

Procurement Notes

Verify the specific automotive grade suffix 'Q' against the official datasheet DS30120 Rev. 22-2 to confirm AEC-Q101 qualification status. Confirm that the '-7-F' suffix corresponds to the standard 3,000-unit tape and reel packaging carrier as defined in the ordering information section of the manufacturer's documentation.

Selection Notes

Select this component for applications requiring a dual N-channel MOSFET in an ultra-small SOT363 package. Ensure the design accommodates the 60V drain-source voltage limit and the 0.23A continuous current rating. Consider the thermal resistance of 318°C/W when mounting on FR-4 substrates with thermal vias to maintain junction temperatures within the specified operating range.

Part Context

This part belongs to the 2N7002DW family of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares the core electrical characteristics of the standard 2N7002DW but includes the 'Q' suffix indicating automotive-grade qualification. The device utilizes DMOS technology to achieve high unit density and low on-resistance in a compact surface-mount footprint.