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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.247A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：247mA (Ta)
- Rds On (Max) @ Id, Vgs：4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：41pF @ 25V
- Power - Max：290mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The Diodes Incorporated 2N7002DWS is a dual N-channel enhancement mode MOSFET housed in an SOT363 surface-mount package. It features a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 247mA at +25°C. The device offers low on-state resistance, with maximum RDS(ON) values of 4.0Ω at VGS=10V, 4.1Ω at VGS=5V, and 5.0Ω at VGS=4V. Total power dissipation reaches 0.29W to 0.37W depending on PCB copper coverage. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual configuration integrating two independent N-channel enhancement mode MOSFETs within a single compact SOT363 footprint.
- Optimized for high efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
- Includes integrated electrostatic discharge (ESD) protection mechanisms to safeguard against transient voltage events.
Applications
- Motor Control
- Power Management Functions
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the standard 3000-unit tape and reel packaging format before finalizing procurement orders. Confirm that the component meets RoHS 2 and RoHS 3 compliance requirements if environmental regulations apply to the target assembly process. Ensure the manufacturing facility holds IATF 16949 certification for automotive-grade supply chain needs.
Selection Notes
Select this component when space constraints necessitate a dual-transistor solution in an SOT363 package rather than discrete single transistors. Evaluate the 4.0Ω maximum on-resistance at VGS=10V to ensure compatibility with logic-level drive voltages in low-power circuits. Consider the 60V breakdown rating for appropriate margin in low-voltage battery-powered systems.
Part Context
This part belongs to the 2N7002 family of dual N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It serves as a space-efficient alternative to using two separate single-channel devices, consolidating functionality into the SOT363 case style. The series is designed for general-purpose switching and load control applications requiring minimal board area.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters against existing designs before considering alternative manufacturers or packages.
