2N7002E-7-F

$0.16

Description：MOSFET N-CH 60V 250MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4186da9310a0 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 250MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.22 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：370mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Download product information

2N7002E-7-F

Overview

The 2N7002E-7-F is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 300mA at +25°C. The device exhibits a low on-state resistance (RDS(ON)) of 3Ω max at VGS = 10V and ID = 250mA, with a gate threshold voltage (VGS(th)) ranging from 1.0V to 2.5V. Total gate charge (Qg) is typically 223pC. It operates within a temperature range of -55°C to +150°C and is housed in a SOT-23 package.

Feature Summary

Low on-resistance for high-efficiency power management
Fast switching speed with low input capacitance
Totally lead-free and fully RoHS compliant
Halogen and antimony free "Green" device

Applications

Motor controls
Power-management functions

Procurement Notes

Verify the component against official Diodes Incorporated datasheet DS30376 Rev. 17. Confirm the marking code K7B matches the 2N7002E product type. Ensure the ordering suffix -7-F corresponds to the 3,000-unit tape and reel carrier. Validate that the part meets JEDEC standards for high reliability as specified in the manufacturer's quality definitions.

Selection Notes

Select this component when a single N-channel MOSFET with a 60V rating and 300mA continuous current capability is required. The 3Ω RDS(ON) specification supports efficient switching in low-voltage applications. The SOT-23 package facilitates surface-mount assembly for space-constrained designs. Verify thermal dissipation requirements against the 540mW total power dissipation limit under specific PCB copper coverage conditions.

Part Context

This part belongs to the 2N7002 series of N-channel enhancement mode MOSFETs designed for minimizing on-state resistance while maintaining superior switching performance. The 2N7002E variant specifically targets high-efficiency power-management applications. It is distinct from dual-channel variants like the 2N7002DW and automotive-compliant versions such as the 2N7002EQ.