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The 2N7002E-7-G is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and a continuous drain current of 300mA. The device utilizes a SOT-23 surface-mount package with three pins. Key electrical parameters include a maximum on-resistance of 3 Ohms at 10V gate drive, a typical gate charge of 223pC, and a threshold voltage range of 1V to 2.5V. It operates within a temperature range of -55°C to +150°C.
Verify the specific suffix 'G' against official Diodes Incorporated documentation to confirm compliance details or marking variations compared to standard variants. Ensure the component matches the required SOT-23 footprint and pinout configuration for your PCB design. Cross-reference datasheet revision dates to validate parameter consistency before finalizing procurement specifications.
Select this component for low-voltage switching tasks requiring compact surface-mount integration. The 60V rating provides adequate headroom for common 5V and 12V logic systems. Evaluate thermal dissipation requirements based on the 540mW power rating and ensure gate drive voltages remain within the specified ±20V limits to prevent device damage during operation.
This part belongs to the 2N7002 series of N-channel MOSFETs from Diodes Incorporated. The series is widely used in consumer electronics and industrial control boards due to its small form factor and reliable performance. The 'E' designation typically indicates specific electrical characteristics optimized for general-purpose switching, while the '-7-F' or '-7-G' suffixes denote packaging and compliance attributes.
Direct substitutes include the 2N7002E-T1-E3 (Vishay) and 2N7002ET7G (onsemi). Verify that replacement parts maintain compatible Rds(on), Vgs(th), and package dimensions to ensure seamless integration without redesigning the host circuit board.