2N7002EQ-7-F

2N7002EQ-7-F

$0.05
  • Description:2N7002 FAMILY SOT23 T&R 3K
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:7b8832252912 Category: Brand:

  
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Product Detailed Parameters

  • Description:2N7002 FAMILY SOT23 T&R 3K
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:292mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:3Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.5 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:35 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):500mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3
  • Package / Case:TO-236-3, SC-59, SOT-23-3

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2N7002EQ-7-F

Overview

The 2N7002EQ-7-F is an N-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage of 60V and a continuous drain current ranging from 233mA to 334mA depending on thermal conditions. The device offers low on-resistance, with maximum values of 3Ω at VGS=10V and 4Ω at VGS=4.5V. It operates within a temperature range of -55°C to +150°C and is housed in a compact SOT-23 surface mount package.

Feature Summary

  • Qualified to AEC-Q101 standards with PPAP capability for automotive use
  • Low on-resistance and low gate threshold voltage for efficient switching
  • Fast switching speed combined with low input capacitance
  • Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

  • Motor control circuits
  • Power management functions

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets the necessary automotive quality standards if deployed in vehicle systems. Ensure compatibility with IATF 16949 certified manufacturing processes. Check datasheet revisions for any updates to electrical characteristics or mechanical dimensions before finalizing procurement specifications.

Selection Notes

Select this component when automotive qualification and high reliability are required. Consider the specific thermal resistance and power dissipation limits based on the PCB layout. Evaluate the gate charge requirements against the driving circuit capabilities. Verify that the package size fits the available board space constraints.

Part Context

This part belongs to the 2N7002 series of N-channel MOSFETs manufactured by Diodes Incorporated. It is specifically engineered to meet stringent automotive industry requirements. The device utilizes silicon technology and is packaged in a standard SOT-23 form factor suitable for automated surface mount assembly.

Replacement Considerations

Consult official manufacturer documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying all electrical and mechanical parameters.

2N7002EQ-7-F2N7002EQ-7-F
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