2N7002ET1G

$0.16

Description：MOSFET N-CH 60V 260MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a2d58e21d22e Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 260MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.5Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.81 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：26.7 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：300mW (Tj)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3 (TO-236)
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002ET1G

Overview

The onsemi 2N7002ET1G is a single N-channel enhancement mode MOSFET housed in a SOT-23 (TO-236) surface-mount package. It features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 260 mA at 25°C ambient temperature, with a pulsed drain current capability of 1.2 A. The device utilizes Trench technology to achieve a low maximum on-resistance of 2.5 Ω at a gate-source voltage of 10 V and 3.0 Ω at 4.5 V. Key electrical characteristics include a gate threshold voltage ranging from 1.0 V to 2.5 V and a total gate charge of 0.81 nC. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Utilizes Trench technology for enhanced performance
Low on-resistance optimized for efficiency
Small footprint surface mount packaging
AEC-Q101 qualified for automotive applications

Applications

Low side load switching
Level shift circuits
DC-DC converter topologies
Portable electronic devices such as digital still cameras, PDAs, and cell phones

Procurement Notes

Verify the specific ordering suffix 'T1G' corresponds to the required tape and reel quantity of 3000 units per manufacturer specifications. Confirm that the S-prefix designation aligns with any unique site or control change requirements mandated by your supply chain standards. Ensure compatibility with RoHS compliance and halogen-free material declarations during the procurement process.

Selection Notes

Select this component when a compact N-channel MOSFET with a 60 V rating is required for low-power signal or power switching. The low gate charge facilitates efficient driving from logic-level interfaces. Consider the thermal resistance and power dissipation limits relative to the expected duty cycle and ambient operating conditions to ensure reliable operation within the specified temperature range.

Part Context

This part belongs to the 2N7002E series of small signal MOSFETs manufactured by onsemi. It is designed as a general-purpose switching device suitable for space-constrained printed circuit board layouts. The SOT-23 package provides a standardized footprint compatible with automated assembly processes commonly used in consumer electronics manufacturing.