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Product Detailed Parameters
- Description：MOSFET N-CH 60V 260MA SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：260mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.5Ohm @ 240mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.81 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：26.7 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300mW (Tj)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3 (TO-236)
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The onsemi 2N7002ET3G is a single N-channel enhancement mode MOSFET designed for surface-mount applications. It features a 60V drain-source breakdown voltage and supports a continuous drain current of 260mA at 25°C ambient temperature. The device utilizes a SOT-23-3 (TO-236) package with a maximum power dissipation of 300mW. Key electrical characteristics include a gate-source voltage rating of ±20V, a typical threshold voltage of 2.5V at 250µA, and a maximum on-resistance of 2.5Ω at 10V gate drive. Operating temperatures range from -55°C to +150°C junction temperature.
Feature Summary
- Single N-channel enhancement mode configuration optimized for general-purpose switching
- Low input capacitance supporting fast switching speeds in signal paths
- Robust thermal performance within a compact SOT-23-3 surface-mount footprint
Applications
- Battery protection circuits
- Load switches
- Small-signal switching
Procurement Notes
Verify the specific suffix ET3G against official onsemi documentation to confirm exact binning and tape-and-reel specifications. Confirm RoHS compliance status directly with the manufacturer datasheet as regulatory requirements may vary by production lot. Ensure the component matches the required SOT-23-3 pinout for your PCB layout before finalizing procurement.
Selection Notes
Select this component when a standard 60V N-channel MOSFET is required in a minimal SOT-23-3 footprint. It serves as a direct replacement for legacy 2N7002 designs requiring similar voltage and current ratings. Consider the 2.5Ω Rds(on) specification for low-power logic interface applications where higher currents are not needed.
Part Context
This part belongs to the widely adopted 2N7002 family of small-signal MOSFETs. It represents an evolution of the classic TO-92 discrete transistor into a modern surface-mount format suitable for automated assembly. The device maintains compatibility with standard logic levels while offering improved packaging consistency compared to through-hole variants.
Replacement Considerations
Public confirmed substitute part numbers include 2N7002KT1G and 2N7002KT3G from onsemi. Other manufacturers offer equivalent parts such as Vishay's 2N7002K-T1-E3. Verify pin compatibility and electrical parameters before substitution.
