2N7002EY

$0.11

Description：N-CHANNEL SMD MOSFET ESD PROTECT
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5e80648a167c Category: Single FETs, MOSFETs Brand: ANBON SEMICONDUCTOR (INT'L) LIMITED

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Product introduction

Product Detailed Parameters

Description：N-CHANNEL SMD MOSFET ESD PROTECT
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：2.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：18 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002EY

Overview

The 2N7002EY is an N-Channel Enhancement Mode MOSFET manufactured by ANBON SEMICONDUCTOR (INT'L) LIMITED. It utilizes Trench Power MV MOSFET technology and is housed in a SOT-23 package. The device features a drain-source voltage rating of 60 V, a continuous drain current of 0.3 A, and a maximum power dissipation of 0.3 W. Key electrical parameters include a gate-source breakdown voltage of ±20 V, a typical gate threshold voltage of 1.5 V, and a maximum on-resistance of 2.5 Ω at VGS=10V. Dynamic characteristics specify a total gate charge of 1.22 nC and an input capacitance of 21 pF.

Feature Summary

Trench Power MV MOSFET technology
Voltage-controlled small signal switching
Low input capacitance
Fast switching speed

Applications

Battery operated systems
Solid-state relays

Procurement Notes

Verify the manufacturer designation as ANBON SEMICONDUCTOR (INT'L) LIMITED against the specific datasheet AS-3150428 Revision B. Confirm that the component matches the SOT-23 package dimensions and the electrical ratings provided in the official documentation before integration into designs.

Selection Notes

Select this component for applications requiring low input capacitance and fast switching speeds within a compact SOT-23 footprint. Ensure the design accommodates the 0.3 W power dissipation limit and the thermal resistance of 416 °C/W when mounted on standard FR-4 PCBs.

Part Context

This part belongs to the family of N-Channel Enhancement Mode MOSFETs designed for general-purpose small-signal switching. The SOT-23 package provides a surface-mount solution suitable for space-constrained electronic circuits requiring reliable voltage-controlled operation.

Replacement Considerations

Cross-reference with other 60V N-Channel MOSFETs in SOT-23 packages. Verify compatibility regarding RDS(on), Qg, and package pinout if substituting with components from different manufacturers.