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The Nexperia 2N7002F,215 is an N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a maximum drain-source voltage of 60 V and a continuous drain current of 475 mA at 25 °C. The device offers a low on-state resistance of 2 Ω at VGS=10V and total power dissipation up to 0.83 W. Packaged in the SOT-23 (TO-236AB) surface-mount format with three leads, it supports junction temperatures from -65 °C to +150 °C.
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Select this component when designing circuits requiring small-signal switching or level shifting with minimal footprint constraints. The SOT-23 package is ideal for space-sensitive designs. Ensure gate drive voltages align with the logic level compatibility to maintain low on-state resistance during operation.
This part belongs to the 2N7002 series of N-channel MOSFETs manufactured by Nexperia. It represents the tape-and-reel variant of the standard 2N7002 discrete transistor, designed for automated surface-mount assembly processes in consumer, industrial, and computing markets.
Public confirmed substitute: NX7002BKR.