2N7002HR

Overview

The Nexperia 2N7002HR is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology within a SOT-23 surface-mounted package. It features a drain-source voltage of 60 V and a continuous drain current of 360 mA at 25 °C. The device exhibits a maximum on-state resistance of 1.6 Ω at VGS = 10 V. Gate-source voltage limits are ±20 V, with a threshold voltage ranging from 1.1 V to 2.4 V. Total gate charge is typically 0.3 nC. Operating temperatures span from -55 °C to +150 °C junction temperature.

Feature Summary

• Logic-level compatible for direct interface with standard logic outputs
• Very fast switching performance enabled by Trench MOSFET architecture
• Qualified for automotive applications under AEC-Q101 standards

Applications

• Relay driver circuits
• High-speed line drivers
• Low-side load switches
• General switching circuits

Procurement Notes

Verify the specific suffix 'HR' against the manufacturer's official ordering information to confirm packaging details such as reel size or tape width. Confirm that the AEC-Q101 qualification status aligns with your specific automotive reliability requirements before finalizing component selection.

Selection Notes

Select this component when low on-state resistance and rapid switching speeds are required in a compact SOT-23 footprint. Ensure the application operates within the specified 60 V drain-source voltage limit and verify that the logic level compatibility meets the driving circuit's output voltage capabilities.

Part Context

This part belongs to the 2N7002H series of N-channel Trench MOSFETs manufactured by Nexperia. It represents an optimized variant designed for high-efficiency switching applications requiring small form factors and robust automotive-grade reliability certification.

Replacement Considerations

Direct substitutes include other 60 V N-channel MOSFETs in SOT-23 packages with comparable RDS(on) and current ratings. Verify pinout compatibility and thermal characteristics when replacing.