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The Nexperia 2N7002HSX is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a SOT363 (SC-88) surface-mount package with six leads. Key electrical parameters include a drain-source voltage of 60 V and a continuous drain current of 320 mA per transistor at 25 °C. The device features a maximum on-state resistance of 1.6 Ω at VGS = 10 V. It operates within a junction temperature range of -55 °C to +150 °C and is qualified under the AEC-Q101 standard for automotive applications.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details, such as reel or cut tape specifications. Confirm that the component meets the required AEC-Q101 qualification status if intended for automotive use. Ensure the selected variant matches the exact pinout and marking codes defined in the product data sheet to prevent integration errors during assembly.
Select this component when a compact dual N-channel solution is required for low-voltage switching applications. The SOT363 package offers space efficiency for dense PCB layouts. Consider the 60 V rating and 320 mA current capability for appropriate load management. Verify thermal requirements against the specified junction-to-ambient resistance values for the target operating environment.
This part belongs to the 2N7002 series of N-channel MOSFETs from Nexperia. It shares functional similarities with single-channel variants like the 2N7002 but integrates two transistors into one package. The device utilizes advanced Trench technology to achieve fast switching speeds while maintaining logic-level compatibility for direct interface with standard digital control signals.
Publicly confirmed substitute part numbers are not available in the provided source material.