2N7002K-AU_R1_000A2

$0.15

Description：60V N-CHANNEL ENHANCEMENT MODE M
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4f5dc32882ff Category: Single FETs, MOSFETs Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：60V N-CHANNEL ENHANCEMENT MODE M
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：35 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002K-AU_R1_000A2

Overview

The 2N7002K-AU_R1_000A2 is a 60V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. in an SOT-23 package. It features a maximum continuous drain current of 300 mA and a power dissipation rating of 500 mW at 25°C. The device exhibits a low on-state resistance of 3 Ω at VGS=10V and 4 Ω at VGS=4.5V. It includes integrated ESD protection rated at 2 kV HBM and holds AEC-Q101 qualification for automotive reliability.

Feature Summary

Advanced Trench Process Technology with high-density cell design for ultra-low on-resistance
Integrated electrostatic discharge (ESD) protection rated at 2 kV Human Body Model
Very low leakage current in the off condition
Qualified to AEC-Q101 automotive standards

Applications

Battery operated systems
Solid-state relay drivers
Relay control circuits
Display driver interfaces
Memory module switching

Procurement Notes

Verify the specific ordering suffix matches the required tape-and-reel configuration, as packaging variations exist within the product family. Confirm that the component meets RoHS 2.0 compliance requirements and utilizes halogen-free green molding compounds per IEC 61249 standards before finalizing procurement specifications.

Selection Notes

Select this component when a compact surface-mount N-channel switch is required for low-current applications up to 300 mA. The device is suitable for designs needing robust ESD immunity and automotive-grade reliability. Ensure the gate drive voltage supports the specified threshold characteristics for optimal conduction performance.

Part Context

This part belongs to the 2N7002K-AU series of single N-channel enhancement mode MOSFETs. It utilizes silicon technology and is housed in a standard SOT-23 case. The marking code for the device is K72. It is designed for general-purpose switching and amplification tasks in consumer and industrial electronics.

Replacement Considerations

Direct substitutes include other 60V N-channel MOSFETs in SOT-23 packages with comparable RDS(on) and ID ratings. Verify pinout compatibility and thermal resistance values when cross-referencing with alternative manufacturers' components.