2N7002K,215

$0.22

Description：MOSFET N-CH 60V 340MA TO236AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:fc1390c8f5c3 Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 340MA TO236AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：830mW (Ta)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23 (TO-236AB)
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002K,215

Overview

The NXP USA Inc. 2N7002K,215 is an N-channel enhancement mode field-effect transistor utilizing TrenchMOS™ technology within a SOT23 (TO-236AB) plastic surface mount package. Key electrical parameters include a maximum drain-source voltage of 60 V and a continuous drain current of 340 mA at 25 °C. The device features a maximum total power dissipation of 0.83 W and a maximum drain-source on-state resistance of 3.9 Ω at VGS = 10 V. It operates within a junction temperature range of -65 °C to +150 °C.

Feature Summary

Logic level compatible for direct interface with standard logic circuits
Very fast switching performance enabled by TrenchMOS™ technology
Subminiature surface mount package suitable for space-constrained designs
Integrated gate-source ESD protection diodes

Applications

Relay driver
High speed line driver
Switching circuits

Procurement Notes

Verify the manufacturer designation carefully, as the original NXP Standard Product business was rebranded to Nexperia in February 2017. Ensure that documentation referencing Philips Semiconductors or NXP corresponds to the current Nexperia product specifications. Confirm the specific ordering suffix matches the required packaging configuration before finalizing procurement orders.

Selection Notes

Select this component for applications requiring low-voltage logic compatibility and rapid switching speeds. The TrenchMOS™ technology provides efficient conduction characteristics suitable for general-purpose switching tasks. Evaluate thermal constraints based on the specified power dissipation limits and ensure the operating environment remains within the defined junction temperature boundaries for reliable performance.

Part Context

This device belongs to the TrenchMOS™ logic level FET family, originally developed under Philips Semiconductors and later NXP. The 2N7002K represents a standard small-signal MOSFET solution designed for compact surface-mount implementations. It serves as a foundational discrete semiconductor component for various electronic control and signal processing applications.

Replacement Considerations

Consult official cross-reference lists from Nexperia or other authorized distributors to identify verified equivalent part numbers. Do not assume functional interchangeability with generic N-channel MOSFETs without confirming matching electrical ratings and pin configurations.