2N7002KDW_R1_00001

$0.12

Description：MOSFET 2N-CH 60V 0.115A SOT363
Series：-

SKU:e30b2e2de33f Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.115A SOT363
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
Rds On (Max) @ Id, Vgs：3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：35pF @ 25V
Power - Max：200mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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2N7002KDW_R1_00001

Overview

The 2N7002KDW_R1_00001 is a dual N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes advanced trench process technology and high-density cell design to achieve ultra-low on-resistance. The device features ESD protection rated at 2KV HBM and operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a drain-source voltage (VDS) of 60 V, continuous drain current (ID) of 115 mA, and maximum power dissipation (PD) of 200 mW at 25°C. The gate threshold voltage (VGS(th)) ranges from 1 V to 2.5 V, with a forward transconductance (gfS) minimum of 100 mS.

Feature Summary

Advanced Trench Process Technology for enhanced performance
High Density Cell Design for Ultra Low On-Resistance
ESD Protected up to 2KV HBM
Very Low Leakage Current in Off Condition

Applications

Battery Operated Systems
Solid-State Relays Drivers
Relays, Displays, Lamps, Solenoids, Memories

Procurement Notes

Verify the component against the official datasheet specifications provided by Panjit International Inc. Ensure that the ordering suffix matches the required reel packaging configuration. Confirm RoHS compliance and halogen-free status as per IEC61249 standards during the sourcing process.

Selection Notes

Select this component based on its 60V rating and low on-resistance characteristics suitable for small signal switching applications. Consider the SOT-363 package dimensions and thermal resistance values when designing the PCB layout. Verify that the operating conditions remain within the specified absolute maximum ratings.

Part Context

This part belongs to the 2N7002 series of N-Channel Enhancement Mode MOSFETs produced by Panjit. It is designed for general-purpose switching applications requiring low leakage and robust ESD protection. The device is compliant with EU RoHS directives and utilizes green molding compound.

Replacement Considerations

Cross-reference with other manufacturers offering dual N-Channel MOSFETs in SOT-363 packages. Ensure equivalent VDS, ID, and RDS(on) specifications are met before substitution.