2N7002KDWBQ-TP

Overview

The 2N7002KDWBQ-TP is a dual N-channel MOSFET manufactured by Micro Commercial Components (MCC) using Trench Power LV technology. It features an AEC-Q101 qualification and operates within a junction temperature range of -55°C to +150°C. The device provides a drain-source voltage rating of 60V, a continuous drain current of 220mA, and a maximum power dissipation of 240mW. Electrical characteristics include a gate-source voltage limit of ±20V, a typical on-resistance of 0.8Ω at VGS=10V and ID=300mA, and a threshold voltage ranging from 1V to 1.5V. It is housed in a SOT-363 package.

Feature Summary

• Dual N-channel configuration utilizing Trench Power LV MOSFET technology for enhanced performance.
• AEC-Q101 qualified for automotive reliability standards.
• Integrated electrostatic discharge protection rated up to 2KV under Human Body Model conditions.
• Halogen-free 'Green' device compliant with RoHS directives.

Applications

• Automotive electronic circuits requiring AEC-Q101 compliance
• General-purpose switching applications
• Power management modules

Procurement Notes

Verify the authenticity of the component through authorized MCC distributors or direct procurement channels to ensure traceability and quality. Confirm that the ordering suffix '-TP' corresponds to the tape and reel packaging format containing 3000 pieces per reel. Ensure the specific part number matches the required dual N-channel specification and SOT-363 package type before finalizing orders.

Selection Notes

Select this component when a dual N-channel configuration is required in a compact SOT-363 footprint. The AEC-Q101 qualification makes it suitable for automotive environments. Consider the 60V breakdown voltage and 220mA continuous current limits for load requirements. Verify thermal management needs against the 515°C/W junction-to-ambient thermal resistance for steady-state operation.

Part Context

This component belongs to the 2N7002KDWBQ series of dual N-channel MOSFETs produced by Micro Commercial Components. It represents an evolution of single-channel devices into a dual configuration within the same small outline transistor form factor. The series utilizes trench technology to achieve low on-resistance while maintaining high voltage blocking capabilities suitable for various switching applications.

Replacement Considerations

Direct substitutes must match the dual N-channel topology, SOT-363 package, and AEC-Q101 qualification. Verify electrical parameters such as VDS, ID, and RDS(on) to ensure compatibility. Cross-reference with other manufacturers offering equivalent trench technology dual MOSFETs if availability is constrained.

FAQ

What is the maximum operating junction temperature for the 2N7002KDWBQ-TP?

The maximum operating junction temperature is +150°C.

Does the 2N7002KDWBQ-TP have internal ESD protection?

Yes, the device includes internal ESD protection rated up to 2KV under the Human Body Model (HBM).

What packaging format is used for the 2N7002KDWBQ-TP?

The component is supplied in Tape & Reel packaging with 3000 pieces per reel.