2N7002KT7G

$0.16

Description：MOSFET N-CH 60V 320MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:295c23e5a0ed Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 320MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：24.5 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：300mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3 (TO-236)
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002KT7G

Overview

The onsemi 2N7002KT7G is a small signal N-channel enhancement mode MOSFET housed in an SOT-23 surface-mount package. It features a drain-to-source voltage rating of 60 V and a continuous drain current capability of 380 mA at 25°C. The device exhibits a maximum on-resistance of 1.6 Ω at a gate drive of 10 V and 2.5 Ω at 4.5 V. Total gate charge is specified at 0.7 nC, with a forward transconductance of 530 mS. Operating junction temperatures range from -55°C to +150°C.

Feature Summary

ESD protected design for robust handling
Low RDS(on) for efficient switching performance
Surface mount packaging for automated assembly

Applications

Low side load switch
Level shift circuits
DC-DC converter
Portable applications such as digital still cameras, PDAs, and cell phones

Procurement Notes

Verify the specific ordering suffix 'T7G' corresponds to the 3500-unit tape and reel configuration. Confirm that the component meets RoHS compliance and lead-free requirements as stated in the datasheet. Ensure the application environment remains within the specified thermal limits and voltage ratings to maintain reliability.

Selection Notes

Select this component when a compact N-channel MOSFET with a 60 V breakdown voltage is required. The low gate charge supports high-speed switching applications. Verify that the available gate drive voltage aligns with the specified RDS(on) thresholds for optimal conduction losses.

Part Context

This part belongs to the 2N7002 family of small signal MOSFETs manufactured by onsemi. The 'K' designation indicates the standard commercial grade version, while the 'T7G' suffix specifies the tape and reel packaging format containing 3500 units per reel.