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The onsemi 2N7002LT1G is a small-signal N-channel MOSFET housed in a surface-mount SOT-23 (TO-236) package. It features a maximum drain-source voltage of 60 V and a continuous drain current of 115 mA at 25°C. The device exhibits a maximum static drain-source on-state resistance of 7.5 Ω at 10 V gate drive and 500 mA drain current. Thermal dissipation reaches 225 mW on an FR-5 board, with an operating junction temperature range from -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets all required environmental standards, including Pb-Free and RoHS compliance, prior to integration into final assemblies.
Select this component when a compact N-channel enhancement mode MOSFET is required for low-current switching tasks. Ensure the application voltage remains within the 60 V drain-source limit and that thermal management accommodates the 225 mW dissipation rating on standard PCB substrates.
This part belongs to the 2N7002L family of small-signal MOSFETs manufactured by onsemi. It shares core electrical characteristics with variants such as the 2V7002L, which carries an additional prefix indicating qualification for automotive-grade supply chain controls and PPAP capability.
Cross-reference with 2V7002LT1G for automotive-specific supply chain requirements. Verify pinout compatibility with Style 21 configurations in the SOT-23 package before substituting.