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The Nexperia 2N7002PM,315 is an N-channel enhancement mode MOSFET designed for surface-mount applications. It features a maximum drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 360 mA. The device utilizes TrenchMOS technology to achieve a low on-state resistance (Rds(on)) of 1.6 Ω at a gate-source voltage (Vgs) of 4.5 V. It operates within a temperature range of -55°C to +150°C junction temperature and has a typical gate charge (Qg) of 0.6 nC. The component is housed in a compact SOT-963 (SC-88A) package.
Verify the specific suffix '315' against official Nexperia documentation to confirm the exact packaging configuration and reel specifications. Ensure that the requested quantity aligns with the manufacturer's standard tape-and-reel requirements. Cross-reference the part number with the latest datasheet to validate electrical parameters before finalizing procurement orders.
Select this component when a small-footprint N-channel MOSFET is required for low-voltage switching applications. The 60 V rating and 360 mA current capability make it suitable for general-purpose signal switching. Consider the SOT-963 package dimensions for PCB layout constraints and verify thermal dissipation requirements based on the specific application load.
This component belongs to the 2N7002 family of N-channel MOSFETs manufactured by Nexperia. It shares functional similarities with other industry-standard parts like the ON Semiconductor 2N7002 but offers specific performance characteristics defined by Nexperia's TrenchMOS technology. The 'PM' designation typically indicates a specific package variant within the broader product line.
Potential substitutes include the Nexperia 2N7002PW,115 or the Nexperia 2N7002,215. Verify pinout compatibility and electrical ratings such as Rds(on) and Id before substitution. Ensure the alternative package type fits the existing footprint.