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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.32A 6TSSOP
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：320mA (Ta)
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 10V
- Power - Max：990mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：6-TSSOP
- Grade：-
- Qualification：-
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Overview
The Nexperia 2N7002PS/ZLX is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a compact SOT363 (SC-88) surface-mounted plastic package with six leads. The device supports a drain-source voltage of 60 V and a continuous drain current of 320 mA per transistor at 25 °C. Key electrical parameters include a maximum gate-source voltage of ±20 V, a typical on-state resistance of 1.6 Ω at VGS=10V, and a total power dissipation of 420 mW at 25 °C ambient temperature. The component operates within an ambient temperature range of -55 °C to +150 °C.
Feature Summary
- Logic-level compatible for direct interface with standard logic circuits
- Very fast switching performance enabled by Trench MOSFET technology
- AEC-Q101 qualified for automotive application reliability
Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
Procurement Notes
Verify the specific suffix ZLX against official Nexperia documentation to confirm manufacturing origin or tape-and-reel specifications. Ensure the ordering code matches the required AEC-Q101 qualification status. Confirm that the SOT363 package dimensions align with the target PCB footprint requirements before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel configuration is required in a minimal footprint. The low on-state resistance and high threshold voltage compatibility make it suitable for logic-driven applications. Consider the thermal resistance characteristics and power dissipation limits relative to the expected duty cycle and ambient operating conditions.
Part Context
This part belongs to the 2N7002 series of N-channel MOSFETs manufactured by Nexperia. The manufacturer originated from the former NXP Standard Product business. The device represents a transition from discrete single-transistor solutions to integrated dual configurations in small outline packages, maintaining the core electrical characteristics of the legacy 2N7002 family while offering space-saving integration.
Replacement Considerations
Direct replacements must match the SOT363 package and dual N-channel topology. Verify equivalent ratings for VDS, ID, and RDS(on). Check if alternative parts require AEC-Q101 qualification if used in automotive contexts.
