2N7002PV,115

Overview

The Nexperia 2N7002PV,115 is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology within an ultra-small SOT666 surface-mounted plastic package. It provides two independent channels in a six-lead configuration with a 0.5 mm pitch. Each transistor supports a drain-source voltage of 60 V and a continuous drain current of 350 mA at 25 °C. The device features a maximum on-state resistance of 1.6 Ω and operates across a temperature range from -55 °C to 150 °C.

Feature Summary

• Logic-level compatible for direct interface with standard logic outputs
• Very fast switching performance enabled by Trench MOSFET technology

Applications

• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when space-constrained designs require dual N-channel MOSFETs in a compact footprint. The SOT666 package offers a small body size suitable for dense PCB layouts. Ensure the application does not require automotive qualification, as this specific variant is non-automotive qualified according to the product data sheet revision history.

Part Context

This part belongs to the 2N7002 series of N-channel MOSFETs manufactured by Nexperia. While sharing the core electrical characteristics of the series, the 2N7002PV,115 distinguishes itself through its dual-channel architecture housed in the SOT666 package. This configuration allows for independent control of two separate loads within a single surface-mount component.

FAQ

Is the 2N7002PV,115 qualified for automotive applications?

No, the product data sheet indicates that this specific version is not automotive qualified.

What is the pin configuration of the SOT666 package for this device?

The package contains six pins: Pin 1 is Source 1, Pin 2 is Gate 1, Pin 3 is Drain 2, Pin 4 is Source 2, Pin 5 is Gate 2, and Pin 6 is Drain 1.