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The Diotec Semiconductor 2N7002PW is an N-channel enhancement mode FET housed in a SOT-323 package. It features a drain-source voltage of 60 V and a continuous drain current of 315 mA at 25°C ambient temperature. The device exhibits a low on-state resistance of less than 1.6 Ω at VGS = 5 V and ID = 50 mA, with a maximum threshold voltage of 2.4 V. Power dissipation reaches 310 mW on a PCB with 1 cm² copper pads per terminal. The component supports a junction temperature up to 150°C and includes SPICE models for simulation.
Verify the specific suffix requirements against project needs. Standard versions are commercial grade. Options including -Q (AEC-Q101 compliant) or -AQ (in qualification) exist for automotive applications. Confirm packaging details such as tape and reel quantities before ordering. Ensure design accounts for thermal resistance variations based on PCB copper pad sizes.
Select this component when a compact N-channel MOSFET with logic-level drive capability is required. The SOT-323 package suits space-constrained designs. Evaluate thermal performance carefully, as power dissipation depends significantly on PCB copper area. Verify that the 60 V breakdown voltage meets circuit requirements. Consider AEC-Q101 variants if automotive reliability standards are mandated.
This part belongs to the 2N7002 series of N-channel enhancement mode FETs manufactured by Diotec Semiconductor. It shares the fundamental electrical characteristics of the standard 2N7002 family but utilizes the SOT-323 surface-mount package. The marking code for identification is 702P. It serves as a modern alternative to older through-hole packages like TO-92 while maintaining similar functional parameters.
Cross-reference with other manufacturers' 2N7002 equivalents in SOT-323 packages. Verify pinout compatibility and ensure RDS(on) and VGS(th) limits align with design specifications. Check for AEC-Q101 compliance if automotive use is intended.