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The Nexperia 2N7002PW,115 is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a compact SC-70 (SOT323) surface-mounted package with three leads. The device supports a maximum drain-source voltage of 60 V and a continuous drain current of 310 mA at 25 °C. Key electrical parameters include a maximum on-state resistance of 1.6 Ω at VGS = 10 V and a typical total gate charge of 0.6 nC. It operates within a junction temperature range up to 150 °C and meets AEC-Q101 automotive qualification standards.
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Select this component when a small footprint N-channel MOSFET is required for low-power switching tasks. The SC-70 package suits space-constrained designs. Ensure the application voltage remains below the 60 V limit and that the thermal dissipation requirements align with the device's power ratings in free air or on a PCB.
This part belongs to the 2N7002PW series of N-channel Trench MOSFETs from Nexperia. It represents a modernized version of the classic 2N7002 discrete transistor, offering improved switching characteristics through trench technology while maintaining compatibility with standard SMD footprints used in consumer and industrial electronics.
Direct pin-compatible replacements include other manufacturers' 2N7002 variants in SOT-23 packages, such as BSS138 or similar N-channel MOSFETs, provided their voltage and current ratings meet or exceed the 60 V and 310 mA specifications.