2N7002PW,115

2N7002PW,115

$0.21
  • Description:MOSFET N-CH 60V 310MA SOT323
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:c4b16aaf28a1 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 60V 310MA SOT323
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:310mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):260mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-323
  • Package / Case:SC-70, SOT-323

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2N7002PW,115

Overview

The Nexperia 2N7002PW,115 is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a compact SC-70 (SOT323) surface-mounted package with three leads. The device supports a maximum drain-source voltage of 60 V and a continuous drain current of 310 mA at 25 °C. Key electrical parameters include a maximum on-state resistance of 1.6 Ω at VGS = 10 V and a typical total gate charge of 0.6 nC. It operates within a junction temperature range up to 150 °C and meets AEC-Q101 automotive qualification standards.

Feature Summary

  • Logic-level compatible for direct interface with standard logic circuits
  • Very fast switching performance enabled by Trench MOSFET technology
  • Qualified for automotive applications under the AEC-Q101 standard

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when a small footprint N-channel MOSFET is required for low-power switching tasks. The SC-70 package suits space-constrained designs. Ensure the application voltage remains below the 60 V limit and that the thermal dissipation requirements align with the device's power ratings in free air or on a PCB.

Part Context

This part belongs to the 2N7002PW series of N-channel Trench MOSFETs from Nexperia. It represents a modernized version of the classic 2N7002 discrete transistor, offering improved switching characteristics through trench technology while maintaining compatibility with standard SMD footprints used in consumer and industrial electronics.

Replacement Considerations

Direct pin-compatible replacements include other manufacturers' 2N7002 variants in SOT-23 packages, such as BSS138 or similar N-channel MOSFETs, provided their voltage and current ratings meet or exceed the 60 V and 310 mA specifications.

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