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Product Detailed Parameters
- Description：DIODE
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：150mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The 2N7002T-7-F-79 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an SOT-523 package. The device supports a drain-source breakdown voltage of 60 V and a continuous drain current of 115 mA at 25°C ambient temperature. Key electrical characteristics include a maximum gate-source voltage of ±20 V, a typical on-resistance of 7.5 ohms at 5V gate drive, and a power dissipation rating of 150 mW. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Surface-mount construction in an ultra-small SOT-523 package for compact circuit designs
- Low on-resistance and low gate threshold voltage for efficient switching performance
- Fast switching speed with low input capacitance to minimize signal delay
- Totally lead-free and fully RoHS compliant with halogen and antimony-free composition
Applications
- Battery protection circuits
- Power management applications
- Signal switching and level shifting
Procurement Notes
Verify the specific suffix '-F-79' against official Diodes Incorporated documentation to confirm exact tape-and-reel specifications and packaging details. Ensure compliance requirements match project standards, as standard variants may differ in reel quantity or marking. Cross-reference the part number with authorized distributors to confirm availability and authenticity before procurement.
Selection Notes
Select this component when a small footprint N-channel MOSFET is required for low-current switching applications. The SOT-523 package offers space savings compared to larger SOT-23 variants. Consider the 115 mA current limit and 150 mW power dissipation when designing thermal management solutions. Verify that the 60 V breakdown voltage meets the system's voltage requirements.
Part Context
This component belongs to the 2N7002 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is widely used in portable electronics and battery-powered devices due to its small size and efficiency. The 'T' designation typically indicates the SOT-523 package variant, distinguishing it from other package options like SOT-23 or SOT-323 available within the same product family.
Replacement Considerations
Compatible substitutes include the 2N7002T-7 and 2N7002H-7 from Diodes Incorporated, which share similar electrical characteristics but may differ in package type or current ratings. Other manufacturers offer equivalent parts such as the BSS138 or 2N7002 variants from Nexperia and Toshiba, provided pinouts and electrical limits are verified.
