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Product Detailed Parameters
- Description：MOSFET N-CH 60V 300MA TO236AB
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：830mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23 (TO-236AB)
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The 2N7002T,215 is an N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a TO-236AB (SOT-23) surface-mounted package. It features a maximum drain-source voltage of 60 V and a continuous drain current of 300 mA at 25 °C. The device exhibits a maximum on-state resistance of 5 Ω at VGS = 10 V and ID = 500 mA. Total power dissipation is rated at 0.83 W at 25 °C. Operating junction temperatures range from -65 °C to +150 °C.
Feature Summary
- Logic level threshold compatible for direct microcontroller interfacing
- Very fast switching capability suitable for high-speed applications
- Integrated source-drain diode with defined reverse recovery characteristics
Applications
- Logic level translation between different voltage domains
- High-speed line driving circuits
- General-purpose switching applications
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm packaging details and availability status. Confirm that the component meets all required environmental standards for the intended deployment environment before finalizing procurement decisions.
Selection Notes
Select this component when a small surface-mount N-channel MOSFET with logic-level drive compatibility is required. Ensure the application voltage remains within the 60 V limit and current demands do not exceed the thermal constraints defined by the solder point temperature ratings.
Part Context
This part belongs to the 2N7002 series of N-channel enhancement mode FETs. Originally developed under Philips Semiconductors, the product line was transferred to Nexperia. The 2N7002T variant specifically denotes the tape-and-reel packaging format for automated assembly processes.
Replacement Considerations
Direct substitutes include the 2N7002,215 and 2N7002K,215. Verify pinout compatibility and electrical parameters such as RDS(on) and VGS(th) when cross-referencing with other manufacturers' equivalents.
