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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.28A SOT563
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：280mA
- Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：150mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The MCC 2N7002V-TP is a dual N-channel MOSFET housed in an SOT-563 package. It features a drain-source voltage of 60 V and a continuous drain current of 280 mA. The device exhibits low on-resistance, with maximum values of 3.0 Ω at VGS=5V and 2.0 Ω at VGS=10V. Gate threshold voltage ranges from 1.0 V to 2.5 V. Total power dissipation is rated at 150 mW, with an operating junction temperature range of -55°C to +150°C.
Feature Summary
- Dual N-Channel configuration within a single compact package
- Low on-resistance for efficient power handling
- Fast switching speed capabilities
- Low gate threshold voltage for logic-level compatibility
Applications
- Battery protection circuits
- Power management systems
- Small signal and analog switching applications
Procurement Notes
Verify the specific suffix against official manufacturer documentation to confirm pinout and electrical tolerances. Ensure the component matches the required SOT-563 footprint and thermal characteristics for your design. Cross-reference datasheet revision dates to validate parameter consistency before finalizing procurement specifications.
Selection Notes
Select this component when space-constrained designs require two independent N-channel switches. The low input capacitance supports high-frequency operation. Verify that the 150 mW power dissipation rating meets the thermal requirements of the target application environment under expected load conditions.
Part Context
This part belongs to the 2N7002 series of N-channel MOSFETs manufactured by Micro Commercial Components. While standard variants often utilize SOT-23 or SOT-323 packages for single channels, the 2N7002V variant integrates dual channels into the SOT-563 form factor, offering a solution for multi-switch requirements in limited board areas.
Replacement Considerations
Check for direct equivalents such as the 2N7002DW-7-F from Diodes Inc., which also provides a dual N-channel configuration in a similar small outline package. Confirm pinout compatibility and electrical parameter overlaps before substitution.
FAQ
What is the maximum drain-source breakdown voltage?
The maximum drain-source breakdown voltage (V(BR)DSS) is 60 V.
What package type does the 2N7002V-TP use?
It utilizes the SOT-563 surface-mount package.
What is the typical forward transconductance?
The minimum forward transconductance (gFS) is 80 mS at VDS=10V and ID=200mA.
