ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.28A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：280mA
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：150mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
Download product information
Overview
The Diodes Incorporated 2N7002VAC-7 is a dual N-channel enhancement mode MOSFET housed in an SOT563 surface-mount package. It features a maximum drain-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 280 mA. The static drain-source on-resistance (RDS(on)) ranges from 7.5 Ω to 13.5 Ω depending on the test condition. Total power dissipation is rated at 150 mW, with a junction-to-ambient thermal resistance of 833 °C/W. The device operates within a temperature range of -55°C to +150°C.
Feature Summary
- Dual N-channel configuration providing two independent switching channels in a single ultra-small package.
- Low input capacitance and fast switching speed suitable for high-frequency signal processing.
- Totally lead-free and fully RoHS compliant, manufactured using halogen and antimony-free green materials.
Applications
- Motor controllers requiring compact dual-switching solutions.
- Power management circuits utilizing low-voltage logic control.
- Signal processing applications involving level shifting or load switching.
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging details. Confirm that the component meets required automotive or industrial reliability standards if applicable. Ensure compatibility with automated surface-mount assembly processes. Check for any recent product change notifications regarding material or manufacturing site updates.
Selection Notes
Select this component when space-constrained designs require dual N-channel MOSFETs. Evaluate the 150 mW power dissipation limit against expected thermal loads. Consider the 60 V breakdown voltage for appropriate circuit protection margins. Verify gate threshold voltage requirements align with the driving logic levels.
Part Context
This part belongs to the 2N7002VC/VAC series of dual N-channel enhancement mode MOSFETs. It shares electrical characteristics with the 2N7002VC variant but differs in marking codes and potentially internal binning. The SOT563 package allows for higher density PCB layouts compared to standard single-channel packages.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official manufacturer cross-reference lists for verified alternatives.
