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Product Detailed Parameters
- Description：MOSFET N-CH 60V 115MA SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The 2N7002W-7-F is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 115mA at +25°C. The device offers a maximum static drain-source on-resistance of 7.5Ω at VGS = 5V and 13.5Ω at VGS = 10V. Total power dissipation is rated at 200mW, with a thermal resistance junction-to-ambient of 625°C/W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Low on-state resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free green device
Applications
- Motor control
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-7-F' corresponds to the standard tape and reel packaging configuration containing 3,000 units per reel. Confirm that the component meets the required JEDEC standards for high reliability as referenced in AEC-Q101. Ensure the procurement channel provides original manufacturer documentation to validate the part authenticity and traceability.
Selection Notes
Select this component for applications requiring a compact surface mount N-channel MOSFET with logic-level drive capabilities. The SOT-323 package is suitable for space-constrained designs. Evaluate the 7.5Ω on-resistance against load requirements to ensure efficient operation. Consider the 60V breakdown voltage when designing circuits with potential voltage spikes or higher supply rails.
Part Context
This component belongs to the 2N7002 series of N-channel enhancement mode field effect transistors. It utilizes a standard SOT-323 case type molded plastic housing. The device is designed to minimize on-state resistance while maintaining superior switching performance. It is intended for use in general-purpose switching and amplification applications within electronic circuits.
Replacement Considerations
For automotive applications requiring specific change control, refer to the related automotive grade Q-suffix parts qualified to AEC-Q101. Verify pinout compatibility and electrical parameters match before substituting with other manufacturers' equivalents.
