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The 2N7002W-TP is a single N-channel enhancement mode MOSFET manufactured by Micro Commercial Components. It utilizes silicon technology and is housed in an SOT-323-3 surface-mount package. The device features a drain-source breakdown voltage of 70 V and a continuous drain current of 115 mA. Its on-resistance is specified at 13.5 Ohms, with a gate-source voltage range of -20 V to +20 V. The threshold voltage is typically 1 V, and the power dissipation capacity is 200 mW. Operating temperatures span from -55°C to +150°C.
Verify the specific suffix 'TP' against official MCC documentation to confirm tape-and-reel packaging specifications. Ensure the SOT-323-3 package variant matches the design layout. Cross-reference the 70V rating with system requirements rather than assuming standard 60V equivalents. Confirm RoHS compliance status through the manufacturer's latest environmental declarations before finalizing procurement.
Select this component when a small-footprint N-channel MOSFET is required for low-current switching tasks. The 115 mA current rating limits suitability to signal-level or low-power load applications. The 13.5 Ohm on-resistance may generate heat in high-duty cycles; verify thermal constraints. Compare the 70V breakdown voltage against circuit transients to ensure adequate margin over standard 60V alternatives.
This part belongs to the 2N7002W series from Micro Commercial Components. It represents a single-channel variant distinct from dual-channel versions like the 2N7002DW-TP. The W suffix typically denotes the specific SOT-323-3 package form factor within the manufacturer's lineup, differentiating it from other packages such as SOT-23.
Publicly confirmed substitute part numbers are not available in the provided source material.