2N718

Single Bipolar Transistors Overview

The 2N718A is a small signal NPN silicon bipolar junction transistor designed for low-power applications. It features a collector-emitter voltage rating of 30 V and a maximum collector current of 500 mA. The device operates within a temperature range of -55 °C to +175 °C and is housed in a TO-18 (TO-206AA) cylindrical metal can package with three pins.

Single Bipolar Transistors Feature Summary

• Qualified per MIL-PRF-19500/181 standards
• High thermal stability up to 200 °C junction temperature
• Single-element NPN configuration

Single Bipolar Transistors Applications

• Low power switching circuits
• Amplifier stages
• Military-grade electronic assemblies

Single Bipolar Transistors Procurement Notes

Verify the specific suffix (e.g., A, L) against the required military qualification level (JAN, JANTX, JANTXV, MAX). Confirm lead times and availability directly with authorized distributors or Microchip Technology, as stock levels fluctuate. Ensure compliance with RoHS directives if applicable to the specific revision.

Single Bipolar Transistors Selection Notes

Select this component when a ruggedized, hermetically sealed NPN transistor is required for high-reliability environments. Consider the TO-18 package for superior thermal dissipation compared to plastic packages. Verify that the 30 V collector-emitter voltage and 500 mA current limits meet the circuit requirements.

Single Bipolar Transistors Part Context

This part belongs to the family of qualified small-signal bipolar transistors manufactured by Microsemi (now Microchip Technology). These devices are specifically engineered for aerospace and defense applications where long-term reliability and performance under extreme conditions are critical.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2N1613 and 2N1613L, which share similar electrical characteristics and package types. Verify pinout compatibility and exact voltage/current ratings before substitution.