2N720A

Single Bipolar Transistors Overview

The STMicroelectronics 2N720A is an NPN low-power silicon transistor qualified per MIL-PRF-19500/182. It features a collector-emitter voltage of 80 Vdc and a collector current rating of 500 mAdc. Total power dissipation reaches 0.5 W at +25°C ambient temperature. The device operates within a junction temperature range of -65 to +200°C. Electrical characteristics include a forward-current transfer ratio (hFE) ranging from 20 to 120 depending on collector current. Switching performance specifies a combined turn-on and turn-off time of 30 nanoseconds.

Single Bipolar Transistors Feature Summary

• Qualified for military standards under MIL-PRF-19500/182 specifications
• High thermal stability with extended operating junction temperature up to +200°C
• Fast switching capability suitable for high-frequency applications

Single Bipolar Transistors Applications

• Military-grade amplifier circuits
• High-reliability switching applications
• Aviation electronic systems

Single Bipolar Transistors Procurement Notes

Verify the specific qualification level required, as the datasheet lists multiple variants including JAN, JANTX, and JANTXV. Confirm package type compatibility, noting that the 2N720A utilizes a TO-18 metal can package distinct from other series members. Ensure supply chain sources provide documentation confirming adherence to the referenced military performance specification for critical deployments.

Single Bipolar Transistors Selection Notes

Select this component when military reliability standards are mandatory for low-power discrete semiconductor applications. The wide junction temperature range supports operation in extreme environmental conditions where standard commercial parts would fail. Consider the TO-18 package constraints for thermal management and physical integration within constrained chassis designs requiring robust mechanical protection.

Single Bipolar Transistors Part Context

This component belongs to the 2N720A, 2N1893, and 2N1893S series of NPN transistors manufactured by STMicroelectronics. While sharing similar electrical profiles, thermal resistance and package types vary across the series. The 2N720A specifically employs a TO-18 metal can package, distinguishing it from the TO-5 packages used by the 2N1893 variants.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2N1893 and 2N1893S, though these utilize different TO-5 packaging. Verify pinout compatibility and thermal resistance differences before substitution. Other generic NPN transistors may match electrical ratings but will lack the specific MIL-PRF-19500/182 qualification required for this application.

Single Bipolar Transistors FAQ

What is the maximum junction temperature for the 2N720A?

The operating and storage junction temperature range extends up to +200°C.

How does the collector-emitter breakdown voltage change with base resistance?

With the base open, the breakdown voltage is 80 Vdc. When a 10 Ω resistor is connected between the base and emitter, the voltage increases to 100 Vdc.

What is the typical switching speed of this transistor?

The combined turn-on and turn-off time is specified at 30 nanoseconds under pulse test conditions.