Single Bipolar Transistors 2N930 product image

2N930

$5.75
  • Description:TRANS NPN 45V 0.03A TO-18
  • Series:-

SKU:afca497184b0 Category: Brand:

  
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2N930 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 45V 0.03A TO-18. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N930

  • Description:TRANS NPN 45V 0.03A TO-18
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):30 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 500µA, 10mA
  • Current - Collector Cutoff (Max):2nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10µA, 5V
  • Power - Max:300 mW
  • Frequency - Transition:-
  • Operating Temperature:-55°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package:TO-18 (TO-206AA)
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N930

2N930

Single Bipolar Transistors Overview

The Microchip Technology 2N930 is a silicon NPN small-signal bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It features a maximum collector current of 30 mA and a collector-emitter voltage rating of 45 V. The device operates within an extended temperature range from -65 °C to +200 °C, ensuring reliability in harsh environments. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at specified test conditions. The component is housed in a TO-72 metal can package with three leads, suitable for through-hole mounting.

Single Bipolar Transistors Feature Summary

  • High-temperature operation capability up to 200 °C
  • Robust NPN silicon construction for reliable switching
  • Metal can packaging for enhanced durability

Single Bipolar Transistors Applications

  • Military aerospace circuits
  • Harsh environment industrial controls
  • General-purpose signal amplification

Single Bipolar Transistors Procurement Notes

Verify the specific suffix (e.g., /TR, JANTX) as it dictates the exact mechanical and environmental specifications. Confirm RoHS compliance status directly with the manufacturer, as military variants often differ from commercial standards. Check for active production status or obsolescence notices via official Microchip channels before finalizing design-in decisions.

Single Bipolar Transistors Selection Notes

Select this component when high-temperature stability and ruggedness are required over standard commercial transistors. Ensure the circuit design accommodates the TO-72 package dimensions and thermal dissipation limits. Compare hFE ranges against application requirements to guarantee sufficient gain margins under varying operating temperatures.

Single Bipolar Transistors Part Context

This part belongs to the legacy 2N series of transistors, widely used in defense and aerospace sectors. Microchip Technology continues to support these parts for long-term mission-critical systems where component longevity and proven performance are essential. The 2N930 serves as a fundamental building block in older and specialized electronic architectures.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include Jan2N930/TR for space-grade versions. Commercial equivalents may exist but require verification of temperature ratings and package compatibility. Always consult the latest datasheet for pinout and electrical parameter alignment before substitution.

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