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2PB710AR,115 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is TRANS PNP 50V 0.5A SMT3 MPAK. Review the specifications below when checking this part for your BOM.
The 2PB710AR,115 is a PNP general-purpose transistor manufactured by NXP Semiconductors. It operates with a maximum collector-emitter voltage of -50 V and supports a continuous DC collector current of up to -500 mA. The device is housed in an SC-59 (SOT346) plastic surface-mount package. For the AR suffix variant, the minimum DC current gain (hFE) is specified at 120 under standard test conditions.
Verify that the ordering suffix matches the required hFE binning specification. Confirm the component status remains active as production data sheets may be superseded. Ensure compliance with RoHS directives and check for any export control restrictions applicable to the specific manufacturing origin before finalizing procurement orders.
Select this component when a PNP transistor with moderate current capacity and low voltage ratings is required. Compare the AR binning against system gain requirements. Verify thermal resistance limits relative to the PCB copper area available for heat dissipation during peak load operations.
This discrete semiconductor belongs to the PNP general-purpose transistor family. It serves as the complement to the 2PD602A NPN transistor. The product line has transitioned from NXP to Nexperia, though original documentation retains NXP branding.
The 2PD602A is the documented NPN complement. Verify pinout compatibility and electrical characteristics against alternative SOT346 packages before substitution.
The marking code for the 2PB710AR is DR.
The maximum collector-base voltage (VCBO) with the emitter open is -60 V.
Pin 1 corresponds to the base terminal.
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